Nitride-based semiconductor device and method of fabricating the same

ABSTRACT

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nitride-based semiconductor deviceand a method of fabricating the same, and more particularly, it relatesto a nitride-based semiconductor device having an electrode and a methodof fabricating the same.

2. Description of the Background Art

A nitride-based semiconductor laser device has recently been expected asa light source for an advanced large capacity optical disk, and activelydeveloped.

In general, an insulating sapphire substrate is employed for forming anitride-based semiconductor laser device. When a nitride-basedsemiconductor layer is formed on the sapphire substrate, however, alarge number of defects (dislocations) are disadvantageously formed inthe nitride-based semiconductor layer due to large difference betweenthe lattice constants of the sapphire substrate and the nitride-basedsemiconductor layer. Consequently, the characteristics of thenitride-based semiconductor laser device are disadvantageously reduced.

In this regard, a nitride-based semiconductor laser device employing anitride-based semiconductor substrate such as a GaN substrate havingsmall difference in lattice constant with respect to a nitride-basedsemiconductor layer is proposed in general.

FIG. 7 is a sectional view showing a conventional nitride-basedsemiconductor laser device employing an n-type GaN substrate 101.Referring to FIG. 7, nitride-based semiconductor layers (102 to 110) aregrown on a Ga face ((HKLM) plane: M denotes a positive integer) to beimproved in crystallinity in a process of fabricating the conventionalnitride-based semiconductor laser device. A nitrogen face ((HKL-M)plane: M denotes a positive integer) of the n-type GaN substrate 101having a wurtzite structure is employed as the back surface, so that ann-side electrode 112 is formed on this back surface of the n-type GaNsubstrate 101. The fabrication process for the conventionalnitride-based semiconductor laser device to now described in detail.

As shown in FIG. 7, an n-type layer 102 consisting of n-type GaN havinga thickness of about 3 μm, an n-type buffer layer 103 consisting ofn-type In_(0.05)Ga_(0.95)N having a thickness of about 100 nm, an n-typecladding layer 104 consisting of n-type Al_(0.05)Ga_(0.95)N having athickness of about 400 nm, an n-type light guide layer 105 consisting ofn-type GaN having a thickness of about 70 nm, an MQW (multiple quantumwell) active layer 106 having an MQW structure, a p-type layer 107consisting of p-type Al_(0.2)Ga_(0.8)N having a thickness of about 200nm, a p-type light guide layer 108 consisting of p-type GaN having athickness of about 70 nm, a p-type cladding layer 109 consisting ofp-type Al_(0.05)Ga_(0.95)N having a thickness of about 400 nm and ap-type contact layer 110 consisting of p-type GaN having a thickness ofabout 100 nm are successively formed on the upper surface (Ga face) ofthe n-type GaN substrate 101 having a thickness of about 300 μm to about500 μm.

Then, a p-side electrode 111 is formed on a prescribed region of theupper surface of the p-type contact layer 110. The back surface of then-type GaN substrate 101 is polished until the thickness of the n-typeGaN substrate 101 reaches a prescribed level of about 100 μm, and ann-side electrode 112 is thereafter formed on the back surface (nitrogenface) of the n-type GaN substrate 101. Finally, the n-type GaN substrate101 and the layers 102 to 110 are cleft thereby performing elementisolation and forming a cavity facet. Thus, the conventionalnitride-based semiconductor laser device shown in FIG. 7 is completed.

In the conventional nitride-based semiconductor laser device shown inFIG. 7, however, the n-type GaN substrate 101 is so hard that it isdifficult to excellently perform device isolation and form the cavityfacet by cleavage. In order to cope with such inconvenience, a method ofmechanically polishing the back surface of the n-type GaN substrate 101before the cleavage step for reducing irregularity on the back surfacethereby excellently performing element isolation and forming the cavityfacet is proposed. This method is disclosed in Japanese PatentLaying-Open No. 2002-26438, for example.

In the aforementioned conventional method disclosed in Japanese PatentLaying-Open No. 2002-26438, however, stress is applied in the vicinityof the back surface of the n-type GaN substrate 101 when the backsurface of the n-type GaN substrate 101 is mechanically polished.Therefore, microscopic defects such as cracks are disadvantageouslyformed in the vicinity of the back surface of the n-type GaN substrate101. Consequently, contact resistance between the n-type GaN substrate101 and the n-side electrode 112 formed on the back surface (nitrogenface) thereof is disadvantageously increased.

Further, the nitrogen face of the n-type GaN substrate 101 is so easilyoxidized that the contact resistance between the n-type GaN substrate101 and the n-side electrode 112 formed on the back surface (nitrogenface) thereof is disadvantageously increased also by this.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a method of fabricatinga nitride-based semiconductor device capable of reducing contactresistance between the back surface of a nitride-based semiconductorsubstrate or the like and an electrode.

Another object of the present invention is to reduce the number ofdefects in the vicinity of the back surface of the nitride-basedsemiconductor substrate or the like in the aforementioned method offabricating a nitride-based semiconductor device.

Still another object of the present invention is to provide anitride-based semiconductor device capable of reducing contactresistance between the back surface of a nitride-based semiconductorsubstrate or the like and an electrode.

In order to attain the aforementioned objects, a method of fabricating anitride-based semiconductor device according to a first aspect of thepresent invention comprises steps of etching the back surface of a firstsemiconductor layer consisting of either an n-type nitride-basedsemiconductor layer or a nitride-based semiconductor substrate having awurtzite structure and thereafter forming an n-side electrode on theetched back surface of the first semiconductor layer.

In the method of fabricating a nitride-based semiconductor deviceaccording to the first aspect, the back surface of the firstsemiconductor layer consisting of either an n-type nitride-basedsemiconductor layer or a nitride-based semiconductor substrate having awurtzite structure is etched as hereinabove described, whereby a regionincluding defeats in the vicinity of the back surface of the firstsemiconductor layer resulting from a polishing step or the like can beremoved for reducing the number of defects in the vicinity of the backsurface of the first semiconductor layer. Thus, an electron carrierconcentration can be inhibited from reduction resulting from trap ofelectron carriers by defects, so that the electron carrier concentrationcan be increased on the back surface of the first semiconductor layer.Consequently, contact resistance between the first semiconductor layerand the n-side electrode can be reduced. Further, the back surface ofthe first semiconductor layer is so etched that flatness thereof can beimproved as compared with that of a mechanically polished back surface.Thus, the n-side electrode formed on the back surface of the firstsemiconductor layer can also be improved in flatness, whereby adhesionbetween the n-side electrode and a radiator base can be improved whenthe former is mounted on the latter. Consequently, excellent radiabilitycan be attained. Further, the n-side electrode formed on the backsurface of the first semiconductor layer can be so improved in flatnessthat wire bondability with respect to the n-side electrode can beimproved when the n-side electrode is wire-bonded.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the back surface ofthe first semiconductor layer preferably includes a nitrogen face of thefirst semiconductor layer. The term “nitrogen face” denotes a wideconcept indicating not only a complete nitrogen face but also a surfacemainly formed by a nitrogen face. More specifically, the term “nitrogenface” includes a surface having a nitrogen face of at least 50% in thepresent invention. When formed by a nitrogen face, the back surface ofthe first semiconductor layer is so easily oxidized that the oxidizedportion of the back surface can be removed by etching. Thus, contactresistance between the first semiconductor layer and the n-sideelectrode can be further reduced.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the etching steppreferably includes a step of etching the back surface of the firstsemiconductor layer by dry etching. According to this structure, theback surface of the first semiconductor layer can be easily improved inflatness and the number of defects can be reduced in the vicinity of theback surface due to the dry etching.

In the aforementioned method of fabricating a nitride-basedsemiconductor device including the step of etching the back surface ofthe first semiconductor layer by dry etching, the step of etching theback surface of the first semiconductor layer by dry etching preferablyincludes a step of etching the back surface of the first semiconductorlayer by reactive ion etching with Cl₂ gas and BCl₃ gas. According tothis structure, the back surface of the first semiconductor layer can beeasily improved in flatness and the number of defects can be easilyreduced in the vicinity of the back surface. In this case, the ratio ofthe flow rate of BCl₃ gas to the flow rate of Cl₂ gas in the step ofetching the back surface of the first semiconductor layer by thereactive ion etching is preferably at least 30% and not more than 70%.It has been experimentally confirmed that the back surface of the firstsemiconductor layer can be improved in flatness in this range of theratio of the flow rate of BCl₃ gas to that of Cl₂ gas, and hence theback surface of the first semiconductor layer can be reliably improvedin flatness by setting the ratio within this range.

In the aforementioned method of fabricating a nitride-basedsemiconductor device including the step of etching the back surface ofthe first semiconductor layer by dry etching, the etching depth and theetching time in the step of etching the back surface of the firstsemiconductor layer by dry etching are preferably proportional to eachother. According to this structure, the etching depth can be accuratelycontrolled by adjusting the etching time.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the etching steppreferably includes a step of etching the back surface of the firstsemiconductor layer thereby converting the back surface of the first issemiconductor layer to a mirror surface. According to this structure,the back surface of the first semiconductor layer can be furtherimproved in flatness.

The aforementioned method of fabricating a nitride-based semiconductordevice according to the first aspect preferably further comprises a stepof performing heat treatment after the step of forming the n-sideelectrode. According to this structure, contact resistance between thefirst semiconductor layer and the n-side electrode can be furtherreduced.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the etching steppreferably includes a step of etching the back surface of the firstsemiconductor layer by a thickness of at least about 1 μm. According tothis structure, a region including defects in the vicinity of the backsurface of the first semiconductor layer resulting from a polishing stepor the like can be so sufficiently removed that the number of defectscan be further reduced in the vicinity of the back surface of the firstsemiconductor layer.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the firstsemiconductor layer may include the n-type nitride-based semiconductorlayer or the nitride-based semiconductor substrate consisting of atleast one material selected from a group consisting of GaN, BN, AlN, InNand TlN. Further, the n-side electrode may include an Al film.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the nitride-basedsemiconductor device is preferably a nitride-based semiconductorlight-emitting device. According to this structure, contact resistancebetween the first semiconductor layer and the n-side electrode can bereduced in the nitride-based semiconductor light-emitting device,whereby the nitride-based semiconductor light-emitting device can attainexcellent emissivity.

The aforementioned method of fabricating a nitride-based semiconductordevice according to the first aspect preferably further comprises a stepof dipping a nitrogen face of the etched first semiconductor layer in asolution containing at least one of chlorine, fluorine, bromine, iodine,sulfur and ammonium in advance of the step of forming the n-sideelectrode. According to this structure, residues resulting from etchingcan be easily removed from the back surface of the first semiconductorlayer. Thus, contact resistance between the first semiconductor layerand the n-side electrode can be further reduced. In this case, themethod of fabricating a nitride-based semiconductor device furthercomprises a step of performing hydrochloric acid treatment on the backsurface of the first semiconductor layer with an HCl solution in advanceof the step of forming the n-side electrode. According to thisstructure, chlorine-based residues adhering to the back surface of thefirst semiconductor layer due to the etching can be easily removed.

The aforementioned method of fabricating a nitride-based semiconductordevice according to the first aspect preferably further comprises a stepof polishing the back surface of the first semiconductor layer inadvance of the etching step. Also when polishing the back surface of thefirst semiconductor layer, the back surface of the first semiconductorlayer can be improved in flatness and the number of defects resultingfrom polishing can be reduced in the vicinity of the back surfacethrough the etching step following the polishing step.

In the aforementioned method of fabricating a nitride-basedsemiconductor device according to the first aspect, the etching steppreferably includes a step of etching the back surface of the firstsemiconductor layer by wet etching. According to this structure, theback surface of the first semiconductor layer can be easily improved inflatness and the number of defects can be easily reduced in the vicinityof the back surface due to the wet etching. In this case, the step ofetching the back surface of the first semiconductor layer by wet etchingpreferably includes a step of etching the back surface of the firstsemiconductor layer with at least one etchant selected from a groupconsisting of aqua regia, KOH and K₂S₂O₈. Further, the step of etchingthe back surface of the first semiconductor layer by wet etchingpreferably includes a step of etching the back surface of the firstsemiconductor layer while increasing the temperature to about 120° C.According to this structure, the etching rate can be increased to about10 times that in wet etching carried out under the room temperature.

A method of fabricating a nitride-based semiconductor device accordingto a second aspect of the present invention comprises steps of etching anitrogen face of a first semiconductor layer consisting of either ann-type nitride-based semiconductor layer or a nitride-basedsemiconductor substrate having a wurtzite structure by dry etching andthereafter forming an n-side electrode on the etched nitrogen face ofthe first semiconductor layer.

In the method of fabricating a nitride-based semiconductor deviceaccording to the second aspect, the nitrogen face of the firstsemiconductor layer consisting of either an n-type nitride-basedsemiconductor layer or a nitride-based semiconductor substrate having awurtzite structure is etched by dry etching as hereinabove described,whereby a region including defects in the vicinity of the firstsemiconductor layer resulting from a polishing step or the like can beso reduced that the number of defects can be reduced in the vicinity ofthe nitrogen face of the first semiconductor layer. Thus, reduction ofan electron carrier concentration resulting from trap of electroncarriers by defects can be suppressed, whereby the electron carrierconcentration can be increased in the nitrogen face of the firstsemiconductor layer. Consequently, contact resistance between the firstsemiconductor layer and the n-side electrode can be reduced. Further,the nitrogen face of the first semiconductor layer is so etched by dryetching that flatness thereof can be improved as compared with that of amechanically polished nitrogen face. Thus, the n-side electrode formedon the nitrogen face of the first semiconductor layer can also beimproved in flatness, whereby adhesion between the n-side electrode anda radiator base can be improved when the former is mounted on thelatter. Consequently, high radiability can be attained. Further, then-side electrode formed on the nitrogen face of the first semiconductorlayer can be so improved in flatness that wire bondability with respectto the n-side electrode can be improved when the n-side electrode iswire-bonded.

A nitride-based semiconductor device according to a third aspect of thepresent invention is formed through steps of etching the back surface ofa first semiconductor layer consisting of either an n-type nitride-basedsemiconductor layer or a nitride-based semiconductor substrate having awurtzite structure and thereafter forming an n-side electrode on theetched back surface of the first semiconductor layer.

In the nitride-based semiconductor device according to the third aspect,a region including defects in the vicinity of the first semiconductorlayer resulting from a polishing step or the like can be removed byetching the back surface of the first semiconductor layer consisting ofeither an n-type nitride-based semiconductor layer or a nitride-basedsemiconductor substrate having a wurtzite structure as hereinabovedescribed, whereby the number of defects can be reduced in the vicinityof the back surface of the first semiconductor layer. Thus, an electroncarrier concentration can be inhibited from reduction resulting fromtrap of electron carriers by defects, whereby the electron carrierconcentration can be increased on the back surface of the firstsemiconductor layer. Consequently, contact resistance between the firstsemiconductor layer and the n-side electrode can be reduced. Further,the back surface of the first semiconductor layer is so etched thatflatness thereof can be improved as compared with that of a mechanicallypolished back surface. Thus, the n-side electrode formed the backsurface of the first semiconductor layer can also be improved flatness,whereby adhesion between the n-side electrode and a radiator base can beimproved when the former is mounted on the latter. Further, the n-sideelectrode formed on the back surface of the first semiconductor layercan be so improved in flatness that wire bondability with respect to then-side electrode can be improved when the n-side electrode iswire-bonded.

A nitride-based semiconductor device according to a fourth aspect of thepresent invention comprises a first semiconductor layer consisting ofeither an n-type nitride-based semiconductor layer or a nitride-basedsemiconductor substrate having a wurtzite structure and an n-sideelectrode formed on the back surface of the first semiconductor layer,while contact resistance between the n-side electrode and the firstsemiconductor layer is not more than 0.05 Ωcm².

In the nitride-based semiconductor device according to the fourthaspect, the contact resistance between the n-side electrode and thefirst semiconductor layer is set to not more than 0.05 Ωcm², so that thenitride-based semiconductor device can attain excellent devicecharacteristics by reducing the contact resistance between the n-sideelectrode and the first semiconductor layer.

In the aforementioned nitride-based semiconductor device according tothe fourth aspect, an electron carrier concentration is preferably atleast 1×10¹⁷ cm⁻³ in the vicinity of the interface between the firstsemiconductor layer and the n-side electrode. According to thisstructure, the nitride-based semiconductor device can easily reduce thecontact resistance between the n-side electrode and the firstsemiconductor layer.

In the aforementioned nitride-based semiconductor device according tothe fourth aspect, a dislocation density is preferably not more than1×10⁹ cm⁻² in the vicinity of the interface between the firstsemiconductor layer and the n-side electrode. According to thisstructure, the number of defects (dislocations) can be reduced in thevicinity of the interface between the first semiconductor layer and then-side electrode, whereby the contact resistance can be reduced in theinterface between the first semiconductor layer and the n-sideelectrode.

In the aforementioned nitride-based semiconductor device according tothe fourth aspect, the back surface of the first semiconductor layerpreferably includes a nitrogen face of the first semiconductor layer.

In the aforementioned nitride-based semiconductor device according tothe fourth aspect, the first semiconductor layer may include the n-typenitride-based semiconductor layer or the nitride-based semiconductorsubstrate consisting of at least one material selected from a groupconsisting of GaN, BN, AlN, InN and TlN. Further, the n-side electrodemay include an Al film.

In the aforementioned nitride-based semiconductor device according tothe fourth aspect, the nitride-based semiconductor device is preferablya nitride-based semiconductor light-emitting device. According to thisstructure, contact resistance between the first semiconductor layer andthe n-side electrode can be reduced in the nitride-based semiconductorlight-emitting device, whereby the nitride-based semiconductorlight-emitting device can attain excellent emissivity.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 3 are sectional views for illustrating a process offabricating a nitride-based semiconductor laser device according to anembodiment of the present invention;

FIG. 4 is an enlarged sectional view in the step shown in FIG. 3;

FIG. 5 is a perspective view for illustrating the process of fabricatinga nitride-based semiconductor laser device according to the embodimentof the present invention;

FIG. 6 is a graph showing change of an etching rate in a case of varyingthe etching gas ratio in RIE; and

FIG. 7 is a sectional view showing a conventional nitride-basedsemiconductor laser device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention is now described with referenceto the drawings.

A process of fabricating a nitride-based semiconductor laser deviceaccording to the embodiment is described with reference to FIGS. 1 to 5.According to this embodiment, an oxygen-doped n-type GaN substrate 1having a wurtzite structure is formed by a method disclosed in JapanesePatent Laying-Open No. 2000-44400, for example. More specifically, anoxygen-doped n-type GaN layer is formed on a GaAs substrate (not shown)by HVPE with a thickness of about 120 μm to about 400 μm. Thereafter theGaAs substrate is removed thereby obtaining the n-type GaN substrate 1shown in FIG. 1. The n-type GaN substrate 1 has a substrate carrierconcentration of 5×10¹⁸ cm⁻³ according to Hall effect measurement. Theimpurity concentration of the n-type GaN substrate 1 according to SIMS(secondary ion mass spectroscopy) analysis is 1×10¹⁹ cm⁻³. The n-typeGaN substrate 1 is an example of the “first semiconductor layer” in thepresent invention.

An n-type buffer layer 2 consisting of n-type GaN having a thickness ofabout 5 μm, an n-type cladding layer 3 consisting of n-typeAl_(0.08)Ga_(0.92)N having a thickness of about 1 μm, an MQW activelayer 4 consisting of InGaN, a p-type cladding layer 5 consisting ofp-type Al_(0.08)Ga_(0.92)N having a thickness of about 0.28 μm and ap-type contact layer 6 consisting of p-type GaN having a thickness ofabout 70 nm are successively formed on the upper surface (Ga face),i.e., the (0001) plane of the n-type GaN substrate 1 by atmosphericpressure MOCVD under a pressure of about 1 atm (about 100 kPa).

The MQW active layer 4 is formed by alternately stacking four barrierlayers of GaN each having a thickness of about 20 nm and three welllayers of In_(0.15)Ga_(0.85)N each having a thickness of about 3.5 nm.Ga(CH₃)₃, In(CH₃)₃, Al(CH₃)₃ and NH₃ are employed as material gases, andH₂ and N₂ are employed as carrier gases. According to this embodiment,the quantities of these material gases are varied for adjusting thecompositions of the layers 2 to 6. SiH₄ gas (Si) is employed as then-type dopant for the n-type buffer layer 2 and the n-type claddinglayer 3. Cp₂Mg gas (Mg) is employed as the p-type dopant for the p-typecladding layer 5 and the p-type contact layer 6.

Then, the p-type contact layer 6 and the p-type cladding layer 5 arepartially etched through photolithography and etching, thereby formingprojecting portions—(ridge portions) of about 2 μm in thicknessconsisting of projecting portions of the p-type cladding layer 5 andp-type contact layers 6, as shown in FIG. 2. Then, p-side electrodes 7consisting of Pt films having a thickness of about 1 nm. Pd films havinga thickness of about 10 nm and Ni films having a thickness of about 300nm in ascending order are formed on the upper surfaces of the p-typecontact layers 6. Thus, a nitride-based semiconductor laser devicestructure 20 is formed to include a region formed with a plurality ofelements as shown in FIG. 2.

Thereafter the back surface (nitrogen face) of the n-type GaN substrate1 is mechanically polished as shown in FIGS. 3 and 4. A mechanicalpolisher 30 employed for this polishing step is formed by a glass plate11 having a flat surface, a holder 12 supported to be vertically movableand rotatable along arrow R and a buff 13, as shown in FIG. 3. Anabrasive (not shown) consisting of diamond, silicon oxide or aluminahaving particle roughness of about 0.2 μm to about 1 μm is arranged onthe buff 13. This abrasive can particularly excellently polish the backsurface of the n-type GaN substrate 1 if the particle roughness thereofis in the range of about 0.2 μm to about 0.5 μm. The nitride-basedsemiconductor laser device structure 20 is mounted on the lower surfaceof the holder 12 at an interval-through wax 14 not to directly come intocontact with the holder 12, as shown in FIGS. 3 and 4. Thus, thenitride-based semiconductor laser device structure 20 is prevented frombreaking in mechanical polishing. A flat polishing plate made of metalmay be used instead of the glass plate 11.

The mechanical polisher 30 shown in FIG. 3 is employed for polishing theback surface (nitrogen face) of the n-type GaN substrate 1 so that thethickness of the n-type GaN substrate 1 reaches about 120 μm to about180 μm. More specifically, the back surface (see FIG. 4) of the n-typeGaN substrate 1 of the nitride-based semiconductor laser devicestructure 20 mounted on the lower surface of the holder 12 is pressedagainst the upper surface of the buff 13 provided with the abrasive witha constant load. The holder 12 is rotated along arrow R while feedingwater or oil to the buff 13 (see FIG. 3). Thus, the back surface of then-type GaN substrate 1 is polished until the thickness of the n-type GaNsubstrate 1 reaches about 120 μm to about 180 μm. The n-type GaNsubstrate 1 is worked so that the thickness thereof is in the range ofabout 120 μm to about 180 μm, since a cleavage step described later canbe excellently carried out when the thickness of the n-type GaNsubstrate 1 is within this range.

According to this embodiment, the back surface (nitrogen-face) of then-type GaN substrate 1 is thereafter etched for about 20 minutes byreactive ion etching (RIE). This etching is carried out under conditionsof a Cl₂ gas flow rate of 10 sccm, a BCl₃ gas flow rate of 5 sccm, anetching pressure of about 3.3 Pa and RF power of 200 W (0.63 W/cm²)under the room temperature. Thus, the back surface (nitrogen face) ofthe n-type GaN substrate 1 is removed by a thickness of about 1 μm.Consequently, a region, including defects resulting from theaforementioned mechanical polishing, in the vicinity of the back surfaceof the n-type GaN substrate 1 can be removed. Further, the back surfaceof the n-type GaN substrate 1 can be worked into a flatter mirrorsurface as compared with that worked by only mechanical polishing. Themirror surface is defined as a surface state allowing excellent visualconfirmation of a reflected image of the back surface of the n-type GaNsubstrate 1.

In order to confirm the effect of the aforementioned etching, the defect(dislocation) density on the back surface of the n-type GaN substrate 1was measured before and after etching by TEM (transmission electronmicroscope) analysis. Consequently, it has been proved that the defectdensity, which was at least 1×10¹⁰ cm⁻² before etching, was reduced tobelow 1×10⁶ cm⁻² after the etching. Further, the electron carrierconcentration in the vicinity of the back surface of the etched n-typeGaN substrate 1 was measured with an electrochemical C-V profiler.Consequently, the electron carrier concentration in the vicinity of theback surface of the etched n-type GaN substrate 1 was at least 1.0×10¹⁸cm⁻³. Thus, it has been recognized that the electron carrierconcentration in the vicinity of the back surface can be set to a levelsubstantially identical to the substrate carrier concentration (5×10¹⁸cm⁻³) of the n-type GaN substrate 1.

Under the aforementioned etching conditions, the etching time and theetching depth are proportional to each other. Therefore, the etchingdepth can be accurately controlled by adjusting the etching time. Theetching rate and the surface state vary with the composition of etchinggases. FIG. 6 is a graph showing change of the etching rate uponvariation of the etching gas ratio in RIE. In this case, the Cl₂ gasflow rate was fixed to 10 sccm and the BCl₃ gas flow rate was varied formeasuring the etching rate. Consequently, it has been proved that theetched surface is converted to a flat mirror surface when the ratio ofthe BCl₃ gas flow rate to the Cl₂ gas flow rate is in the range of atleast 30% and not more than 70%, as shown in FIG. 6. When the ratio ofthe BCl₃ gas flow rate to the Cl₂ gas flow rate was less than 5% or inexcess of 85%, the etched surface was damaged in flatness and clouded.

After the aforementioned etching step, the nitride-based semiconductorlaser device structure 20 is dipped in an HCl solution (concentration:10%) under the room temperature for 1 minute thereby performinghydrochloric acid treatment. Thus, chlorine-based residues adhering tothe back surface of the n-type GaN substrate 1 in the RIE step areremoved.

Thereafter an n-side electrode 8 consisting of an Al film having athickness of 6 nm, an Si film having a thickness of 2 nm, an Ni filmhaving a thickness of 10 nm and an Au film having a thickness of 300 nmsuccessively from a side closer to the back surface of the n-type GaNsubstrate 1 is formed on the back surface (nitrogen face) of the n-typeGaN substrate 1 of the nitride-based semiconductor laser devicestructure 20 by sputtering or vacuum deposition.

Finally, elements are isolated and a cavity facet is formed by cleavage,thereby completing the nitride-based semiconductor laser deviceaccording to this embodiment as shown in FIG. 5.

In the process of fabricating a nitride-based semiconductor laser deviceaccording to this embodiment, the back surface (nitrogen face) of then-type GaN substrate 1 is etched by RIE as hereinabove described,whereby the region, including defects resulting from the polishing step,in the vicinity of the back surface of the n-type GaN substrate 1 can beremoved. Thus, the electron carrier concentration can be inhibited fromreduction resulting from trap of electron carriers by defects. Whenformed by a nitrogen face, the back surface of the n-type GaN substrate1 is easily oxidized and hence the oxidized part can be removed byetching. Consequently, the contact resistance between the n-type GaNsubstrate 1 and the n-side electrode 8 can be reduced. Contactresistance between the n-type GaN substrate 1 and the n-side electrode 8of a nitride-based semiconductor laser device actually preparedaccording to this embodiment measured by a TLM (transmission line model)method was not more than 2.0×10⁻⁴ Ωcm². When the n-side electrode 8 wasformed on the back surface (nitrogen face) of the n-type GaN substrate 1and the structure was heat-treated in a nitrogen gas atmosphere of 500°C. for 10 minutes, the contact resistance was further reduced to1.0×10⁻⁵ Ωcm².

In the process of fabricating a nitride-based semiconductor laser deviceaccording to this embodiment, the back surface of the n-type GaNsubstrate 1 is etched by RIE as hereinabove described, whereby the backsurface of the n-type GaN substrate 1 can be further improved inflatness as compared with a mechanically polished back surface. Thus,the n-side electrode 8 formed on the back surface of the n-type GaNsubstrate 1 can be also improved in flatness. When the nitride-basedsemiconductor laser device is mounted in a junction-down system, wirebondability with respect to the n-side electrode 8 can be improved. Whenthe n-side electrode 8 is mounted on a radiator base (submount),adhesion between the n-side electrode 8 and the radiator base can beimproved for attaining excellent radiability.

In order to confirm the effect of the present invention etching the backsurface (nitrogen face) of the n-type GaN substrate 1 by RIE in moredetail, an experiment was performed as shown in Table 1.

TABLE 1 Electron Carrier Contact Concen- Sam- Method of FormingElectrode (Back Resistance tration ple Surface Treatment Condition)(Ωcm²) (cm⁻³) 1 Polishing Back Surface of GaN Substrate 20 2.0 × 10¹⁶→Formation of n-Side Electrode 2 Polishing Back Surface of GaN Substrate0.1 5.0 × 10¹⁶ → Hydrochloric Acid Treatment → Formation of n-SideElectrode 3 Polishing Back Surface of GaN Substrate 0.05 1.0 × 10¹⁷→Etching by 0.5 μm by RIE (Cl₂ Gas)→ Formation of n-Side Electrode 4Polishing Back Surface of GaN Substrate 7.0 × 10⁻⁴ 7.1 × 10¹⁷ →Etchingby 1 μm by RIE (Cl₂ Gas)→ Formation of n-Side Electrode 5 Polishing BackSurface of GaN Substrate 3.0 × 10⁻⁴ 1.7 × 10¹⁸ →Etching by 1 μm by RIE(Cl₂ Gas + BCl₃ Gas)→Formation of n-Side Electrode 6 Polishing BackSurface of GaN Substrate 2.0 × 10⁻⁴ 2.5 × 10¹⁸ →Etching by 1 μm by RIE(Cl₂ Gas + BCl₃ Gas) → Hydrochloric Acid Treatment →Formation of n-SideElectrode 7 Polishing Back Surface of GaN Substrate 1.0 × 10⁻⁵ 5.0 ×10¹⁸ →Etching by 1 μm by RIE (Cl₂ Gas + BCl₃ Gas) → Hydrochloric AcidTreatment →Formation of n-Side Electrode → Heat Treatment

Referring to Table 1, various nitrogen face (back surface) treatmentswere performed on samples 1 to 7 consisting of n-type GaN substrateshaving a wurtzite structure for thereafter measuring electron carrierconcentrations in the vicinity of the back surfaces of the n-type GaNsubstrates with an electrochemical V-C measured concentration profiler.After this measurement of the electron carrier concentrations, n-sideelectrodes were formed on the back surfaces of the n-type GaN substratesof the samples 1 to 7 for measuring contact resistance values betweenthe n-type GaN substrates and the n-side electrodes by the TLM method.

The n-side electrodes of the samples 1 to 7 were formed by Al films, Sifilms, Ni films and Au films, similarly to the n-side electrode 8according to the aforementioned embodiment. Substrate polishing, etchingby RIE and hydrochloric acid treatment were performed under conditionssimilar to those employed in the aforementioned embodiment. The sample 6was prepared through the fabrication process according to theaforementioned embodiment.

In the inventive samples 3 to 7 prepared by etching the back surfaces ofthe n-type GaN substrates by RIE, contact resistance values wereremarkably reduced as compared with the sample 1 prepared by a methodsimilar to the prior art. More specifically, the sample 1 exhibitedcontact resistance of 20 Ωcm², while the inventive samples 3 to 7exhibited contact resistance of not more than 0.05 Ωcm², conceivably forthe following reason: In the inventive samples 3 to 7, regions includingdefects resulting from mechanical polishing in the vicinity of the backsurfaces of the n-type GaN substrates were conceivably removed by RIE.Therefore, the electron carrier concentrations were inhibited fromreduction resulting from defects in the vicinity of the back surfaces ofthe n-type GaN substrates in the inventive samples 3 to 7.

Further, the inventive samples 3 to 7 exhibited higher electron carrierconcentrations in the vicinity of the back surfaces of the n-type GaNsubstrates as compared with the sample 1 corresponding to the prior art.More specifically, the sample 1 corresponding to the prior art exhibitedan electron carrier concentration of 2.0×10¹⁶ cm⁻¹, while the inventivesamples 3 to 7 exhibited electron carrier concentrations of at least1.0×10¹⁷ cm⁻³.

In the sample 4 prepared by removing the back surface of the n-type GaNsubstrate by a thickness of about 1 μm by RIE with Cl₂ gas, it waspossible to attain lower contact resistance than the sample 3 preparedby removing the back surface of the n-type GaN substrate by a thicknessof about 0.5 μm by with Cl₂ gas. This is conceivably because it was notpossible to sufficiently remove the region including defects resultingfrom mechanical polishing in the vicinity of the back surface of then-type GaN substrate by removing the back surface of the n-type GaNsubstrate by the thickness of about 0.5 μm. When defect (dislocation)densities of the back surfaces of the n-type GaN substrates weremeasured by TEN analysis in these samples, the sample 3 exhibited adefect density of 1×10⁹ cm⁻². In the sample 4, on the other hand, nodefects were observed in the field of view and the defect density wasnot more than 1×10⁶ cm⁻². Thus it is preferable to remove the backsurface of the n-type GaN substrate by a thickness of at least about 1.0μm by RIE.

In the sample 5 subjected to RIE with Cl₂ gas and BCl₃ gas, contactresistance was further reduced as compared with the sample 4 prepared byetching the back surface of the n-type GaN substrate by RIE with onlyCl₂ gas.

In the samples 6 and 7, corresponding to the aforementioned embodiment,prepared by etching the back surfaces of the n-type GaN substrates byRIE with Cl₂ gas and BCl₃ gas and thereafter performing hydrochloricacid treatment and the sample 7 further heat-treated in a nitrogenatmosphere of 500° C. for 10 minutes, it was possible to obtain lowercontact resistance values as compared with the sample 5 subjected toneither hydrochloric acid treatment nor heat treatment. Comparing thesamples 6 and 7 with each other, it has been proved that the contactresistance between the n-type GaN substrate and the n-side electrode canbe further reduced and the electron carrier concentration in thevicinity of the back surface of the n-type GaN substrate can be furtherimproved by heat treatment.

In the sample 2 dipped in an HCl solution of 10% in concentration forabout 10 minutes (hydrochloric acid treatment) without RIE, it waspossible to obtain lower contact resistance than the sample 1corresponding to the prior art subjected to no hydrochloric acidtreatment. More specifically, the sample 1 exhibited contact resistanceof 20 Ωcm², while the sample 2 exhibited contact resistance of 0.1 Ωcm².This is conceivably because the back surface of the n-type GaN substratewas cleaned by the hydrochloric acid treatment.

If oxygen is employed as the n-type dopant for the n-type GaN substrate,crystallinity is reduced when the oxygen dose is increased to increasethe carrier concentration in order to reduce the contact resistance.According to the present invention, however, the contact resistance canbe reduced also with the oxygen dose (substrate carrier concentration:5×10¹⁸ cm⁻³) for the n-type GaN substrate 1 according to theaforementioned embodiment.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

For example, while the above embodiment has been described withreference to the case of forming a nitride-based semiconductor laserdevice with the n-type GaN substrate 1, the present invention is notrestricted to this but an n-type nitride-based semiconductor substrateor a nitride-based semiconductor layer having a wurtzite structure mayalternatively be employed. For example, a nitride-based semiconductorsubstrate or a nitride-based semiconductor layer consisting of BN (boronnitride), AlN (aluminum nitride), InN (indium nitride) or TlN (thalliumnitride) is conceivable. The nitride-based semiconductor substrate orthe nitride-based semiconductor layer may consist of ternary orquaternary nitride-based semiconductor thereof.

While the back surface (nitrogen face) of the n-type GaN substrate 1 isetched by RIE in the aforementioned embodiment, the present invention isnot restricted to this but other dry etching may alternatively beemployed. For example, reactive ion beam etching, radical etching, orplasma etching may be employed.

While the back surface (nitrogen face) of the n-type GaN substrate 1 isetched by RIE with Cl₂ gas and BCl₃ gas in the aforementionedembodiment, the present invention is not restricted to this but otheretching gases may alternatively be employed. For example, a gas mixtureof Cl₂ and Sicl₄, a gas mixture of Cl₂ and CF₄ or Cl₂ gas may beemployed.

While the nitride-based semiconductor laser device structure 20 isdipped in the HCl solution (hydrochloric acid treatment) after theetching by RIE thereby removing the chlorine-based residues adhering tothe back surface of the n-type GaN substrate 1 in the aforementionedembodiment, the present invention is not restricted to this but thenitride-based semiconductor layer device structure 20 may alternativelybe dipped in another solution containing at least one of chlorine,fluorine, bromine, iodine, sulfur and ammonia.

While the back surface (nitrogen face) of the n-type GaN substrate 1 ismechanically polished after growing the layers 2 to 6 on the uppersurface (Ga face) of the n-type GaN substrate 1 in the aforementionedembodiment, the present invention is not restricted to this but the backsurface (nitrogen face) of the n-type GaN substrate 1 may alternativelybe previously mechanically polished to a prescribed thickness forthereafter forming the layers 2 to 6 on the upper surface (Ga face) ofthe n-type GaN substrate 1. Further alternatively, the nitrogen face ofthe n-type GaN substrate 1 may not be mechanically polished.

While the n-type dopant and the p-type dopant for the layers 2 to 6 areprepared from Si and Mg respectively in the aforementioned embodiment,the present invention is not restricted to this but another n- or p-typedopant may alternatively be employed. For example, Se, Ge or the likemay be employed as the n-type dopant. Further, Be or Zn may be employedas the p-type-dopant.

While the layers 2 to 6 are formed on the n-type GaN substrate 1 byatmospheric pressure MOCVD in the aforementioned embodiment, the presentinvention is not restricted to this but the layers 2 to 6 mayalternatively be formed by another growth method. For example, thelayers 2 to 6 may be formed by low-pressure MOCVD.

While the n-type buffer layer 2 is formed on the n-type GaN substrate 1in the aforementioned embodiment, the present invention is notrestricted to this but no n-type buffer layer 2 may be formed. In thiscase, the fabrication process can be simplified although the layers 3 to6 are slightly reduced in crystallinity.

While the n-side electrode 8 is formed by the Al, Si, Ni and Au films inthe aforementioned embodiment, the present invention is not restrictedto this but the n-side electrode 8 may alternatively be formed byanother electrode structure such as that consisting of a Ti film havinga thickness of 10 nm and an Al film having a thickness of 500 nm, an Alfilm having a thickness of 6 nm, an Ni film having a thickness of 10 nmand an Au film having a thickness of 300 nm or an AlSi film having athickness of 10 nm, a Zn film having a thickness of 300 nm and an Aufilm having a thickness of 100 nm, for example.

While a ridge structure is employed as a current narrowing structure ora transverse light confinement structure in the aforementionedembodiment, the present invention is not restricted to this but acurrent may alternatively be narrowed by an embedded structure employinga high-resistance blocking layer or an n-type blocking layer. Furtheralternatively, a light absorption layer may be formed by ionimplantation or the like as a current narrowing layer or a transverselight confinement structure.

While the present invention is applied to a nitride-based semiconductorlaser device in the aforementioned embodiment, the present invention isnot restricted to this but may be applied to a semiconductor deviceemploying an n-type nitride-based semiconductor layer or a nitride-basedsemiconductor substrate having a wurtzite structure. For example, thepresent invention may be applied to a MESFET (metal semiconductorfield-effect transistor), a HEMT (high electron mobility transistor), alight-emitting diode (LED) device or a VCSEL (vertical cavity surfaceemitting laser) device requiring surface flatness, for example.

While the p- and n-side electrodes 7 and 8 have prescribed thicknessesin the aforementioned embodiment, the present invention is notrestricted to this but the p- and n-side electrodes 7 and 8 mayalternatively have other thicknesses. For example, the electrodes 7 and8 may be reduced in thickness to have translucency, for employing thesemiconductor laser device as a VCSEL device or an LED device. Inparticular, the contact resistance of the n-side electrode 8 can besufficiently reduced according to the present invention also when then-side electrode 8 is formed with a small thickness to havetranslucency.

While the back surface (nitrogen face) of the n-type GaN substrate 1 isdry-etched by RIE in the aforementioned embodiment, the presentinvention is not restricted to this but the back surface (nitrogen face)of the n-type GaN substrate 1 may alternatively be wet-etched. In thiscase, aqua regia, KOH or K₂S₂O₈ is employed as the wet etchant. Forexample, the nitrogen face forming the back surface of the n-type GaNsubstrate 1 may be wet-etched under the room temperature with KOH of 0.1mol in concentration. When the temperature is increased to about 120° C.in this case, the etching rate can be increased to about 10 times ascompared with that under the room temperature.

While the back surface, consisting of the nitrogen face, of the n-typeGaN substrate 1 is dry-etched by RIE in the aforementioned embodiment,the present invention is not restricted to this but the back surface ofthe n-type GaN substrate 1 may alternatively be wet-etched when the backsurface consists of a Ga face. In this case, aqua regia, KOH or K₂S₂O₈is employed as the wet etchant. For example, the Ga face forming theback surface of the n-type GaN substrate 1 may be wet-etched in KOH of0.1 mol in concentration with a mercury lamp of 365 nm under the roomtemperature. When the temperature is increased to about 120° C. in thiscase, the etching rate can be increased to about 10 times as comparedwith that under the room temperature.

While the n-type GaN just substrate 1 having the back surface entirelyformed by a nitrogen face is employed in the aforementioned embodiment,the present invention is not restricted to this but an n-type GaNmisoriented substrate having a back surface partially including a Gaface may alternatively be employed. Such back surface of the n-type GaNmisoriented substrate is also included in the nitrogen face according tothe present invention.

1-27. (canceled)
 28. A nitride-based semiconductor device comprising: afirst semiconductor layer, consisting of either an n-type nitride-basedsemiconductor layer having a wurtzite structure or an n-typenitride-based semiconductor substrate having a wurtzite structure; andan n-side electrode formed on a back surface of said first semiconductorlayer, wherein a dislocation density is not more than 1×10⁹ cm⁻² at theback surface, and contact resistance between said n-side electrode andsaid first semiconductor layer is not more than 0.05 Ωcm².
 29. Thenitride-based semiconductor device according to claim 28, wherein saiddislocation density is not more than 1×10⁶ cm⁻² at the back surface. 30.The nitride-based semiconductor device according to claim 28, whereinthe back surface of said first semiconductor layer includes a nitrogenface of said first semiconductor layer.
 31. The nitride-basedsemiconductor device according to claim 28, wherein the back surface ofsaid first semiconductor layer has predetermined thickness processed.32. The nitride-based semiconductor device according to claim 28,wherein said first semiconductor layer includes oxygen as an n-typedopant.
 33. The nitride-based semiconductor device according to claim32, further comprising an n-type nitride semiconductor layer on saidfirst semiconductor layer, said n-type nitride semiconductor layer dopedeither Si, Se, or Ge.
 34. The nitride-based semiconductor deviceaccording to claim 28, wherein the substrate carrier concentration ofthe n-type semiconductor is at least 5×10¹⁸ cm⁻³.
 35. The nitride-basedsemiconductor device according to claim 28, wherein the back surface ofsaid first semiconductor layer has a flatter mirror surface as comparedwith that worked only by mechanical polishing.
 36. The nitride-basedsemiconductor device according to claim 28, wherein the back surface ofsaid first semiconductor layer has a lower dislocation density ascompared with that worked only by mechanical polishing.
 37. Thenitride-based semiconductor device according to claim 28, wherein saidfirst semiconductor layer has a thickness of not more than 180 um.
 38. Anitride-based semiconductor device comprising: a first semiconductorlayer, consisting of either an n-type nitride-based semiconductor layerhaving a wurtzite structure or an n-type nitride-based semiconductorsubstrate having a wurtzite structure; and an n-side electrode formed ona back surface of said first semiconductor layer, wherein a dislocationdensity is not more than 1×10⁶ cm⁻² in the vicinity of the interfacebetween said first semiconductor layer and said n-side electrode andcontact resistance between said n-side electrode and said firstsemiconductor layer is not more than 0.050 cm².
 39. The nitride-basedsemiconductor device according to claim 38, wherein an electron carrierconcentration is at least 1×10¹⁷ cm⁻³ in the vicinity of the interfacebetween said first semiconductor layer and said n-side electrode. 40.The nitride-based semiconductor device according to claim 38, whereinthe back surface of said first semiconductor layer includes a nitrogenface of said first semiconductor layer.
 41. The nitride-basedsemiconductor device according to claim 38, wherein the vicinity of theinterface between said first semiconductor layer and said n-sideelectrode has a lower dislocation density as compared with that workedonly by mechanical polishing.
 42. The nitride-based semiconductor deviceaccording to claim 38, wherein said first semiconductor layer includesoxygen as an n-type dopant.
 43. The nitride-based semiconductor deviceaccording to claim 42, further comprising an n-type nitridesemiconductor layer on said first semiconductor layer, said n-typenitride semiconductor layer doped either—Si, Se, or Ge.
 44. Thenitride-based semiconductor device according to claim 38, wherein saidfirst semiconductor layer has a thickness of not more than 180 um. 45.The nitride-based semiconductor device according to claim 38, whereinthe substrate carrier concentration of the n-type semiconductor is atleast 5×10¹⁸ cm⁻³.
 46. The nitride-based semiconductor device accordingto claim 38, wherein the back surface of said first semiconductor layerhas a flatter mirror surface as compared with that worked only bymechanical polishing.
 47. The nitride-based semiconductor deviceaccording to claim 38, wherein the electron carrier concentration in thevicinity of the interface between said first semiconductor layer andsaid n-side electrode is at least 1.0×10¹⁸ cm⁻³.
 48. The nitride-basedsemiconductor device according to claim 38, wherein the level of theelectron carrier concentration in the vicinity of the interface betweensaid first semiconductor layer and said n-side electrode issubstantially identical to that of the first semiconductor layer.